Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching

In paper the influence of parameters inductively coupled chloropentafluoroethane plasma on rate and characteristics gallium arsenide etching was studied. Etched GaAs profiles by white light interferometry scanning electron microscopy were investigated. It turned out that process does not depend freon flow, but forward inductive power, as well pressure determined. this case, when power generator increase, surface morphology changes significantly, manifests itself in roughness increase detection defects mask. Carrying a at low leads to deposition single large inhomogeneities substrate. The transition from pulsed continuous is accompanied deterioration anisotropy due polymer layer side walls. Keywords: chloropentafluoroethane, plasma-chemical etching, plasma, arsenide.